v rrm = 50 v - 200 v i f = 200 a features ? high surge capability three tower package ? types from 50 v to 200 v v rr m ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol murt20005(r) MURT20010(r) unit repetitive peak reverse voltage v rrm 50 100 v rms reverse voltage v rms 35 71 v murt20005 thru murt20020r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions murt20020(r) 200 141 silicon super fast recover y diode dc blocking voltage v dc 50 100 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol murt20005(r) MURT20010(r) unit average forward current (per pkg) i f(av) 200 200 a peak forward surge current (per leg) i fsm 2000 2000 a maximum instantaneous forward voltage (per leg) 1.0 1.0 25 25 a 11 ma maximum reverse recovery time (per leg) t rr 75 75 ns thermal characteristics thermal resistance, junction - case (per leg) r jc 0.45 0.45 c/w t c = 140 c 200 t p = 8.3 ms, half sine 2000 i f =0.5 a, i r =1.0 a, i rr = 0.25 a 75 0.45 1 murt20020(r) -55 to 150 -55 to 150 1.0 25 maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f t j = 125 c t j = 25 c i fm = 100 a, t j = 25 c conditions 200 v electrical characteristics, at tj = 25 c, unless otherwise specified www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
murt20005 thru murt20020r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. murt20005 thru murt20020r www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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